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Wafer-scale growth of hexagonal boron nitride passivation layer directly on III-nitride high-electron mobility transistor for radio-frequency operation

Authors :
Seokho Moon
Jaewon Kim
Jiye Kim
Jong Kyu Kim
Source :
Light-Emitting Devices, Materials, and Applications XXVI.
Publication Year :
2022
Publisher :
SPIE, 2022.

Details

Database :
OpenAIRE
Journal :
Light-Emitting Devices, Materials, and Applications XXVI
Accession number :
edsair.doi...........89e9d7550eef17bbe86102b205812383

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