Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film

In this paper, the reproducible nonpolar resistive switching is demonstrated in devices with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au for nonvolatile memory application. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias, which is different from both the WORM characteristics and the bipolar switching characteristics reported before. The resistive ratio between the ON- and OFF-state is on the order of 103 and increases with the device area decreasing. Both the ON- and OFF-state of the memory devices are stable, showing no significant degradation over 104 s under continuous readout testing. It is proposed that the reduction and oxidation of PEDOT: PSS film might be the switching mechanism.