Gettering in multicrystalline silicon wafers with screen-printed emitters

In this paper, the gettering potential of phosphorus dopant pastes used in single-sided screen-printing processes is investigated including the consequences for essential solar cell parameters. These results are supported by minority carrier lifetime measurements with the quasi-steady-state photoconductance method and certified by the analysis of the recombination current density in solar cells on mc-Si wafers. Copyright © 2011 John Wiley & Sons, Ltd.