Trap Density Modulation for IO FinFET NBTI Improvement

Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Trap density investigation with charge pumping identified the source of oxide traps in tall FinFET and the mechanism of NBTI degradation. Finally, after oxide trap reduction, FinFET process was improved for both reliability and performance.