Transport properties of metal/insulator/semiconductor tunnel junctions

Authors :: Park Se-Hyun
B. C. Lee
Jinseo Lee
Jinki Hong
Kyung-Ho Shin
Kungwon Rhie
Kyung-In Jun
Source :: physica status solidi (b). 241:1506-1509
Publication Year :: 2004
Publisher :: Wiley, 2004.
Abstract: The transport properties of ferromagnet/Al2O3/semiconductor tunnel junctions were investigated. Si and GaAs substrates were used, and CoFe and NiFe were taken for ferromagnets. Diode characteristics were observed in current-voltage curves. The dependences on the Al2O3 thickness and temperature were also studied. It is found that the Al2O3 layer plays a crucial role in preventing inter-diffusion at the interface. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)