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XTEM study of low-energy ion-beam synthesized Ge nanoclusters inside SiOx matrix
- Source :
- Bulletin of Materials Science. 44
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- In this work, a system of embedded Ge nanoclusters (NCs) has been fabricated inside a thermally grown SiOx matrix via a low-energy ion-implantation technique. The low-energy ion-implantation technique gives the flexibility to choose the number of ions to be implanted and depth at which the ions to be placed below the SiOx surface. This can be achieved by choosing the proper fluence and energy. Thirty kilo electron volts Ge ions have been implanted into a SiOx matrix (thermally grown) on Si(100) substrate. Ge concentration has been varied by choosing three different fluences (2.5 × 1015, 5 × 1015 and 1 × 1016 ions cm−2). Further, ex situ annealing was carried at 800°C under an inert atmosphere. Fluence-dependent distribution of Ge NCs post-annealing has been explained using Raman spectroscopy, photoluminescence spectroscopy (PL), Rutherford backscattering spectrometry (RBS) and cross-sectional transmission electron microscopy (XTEM) analysis.
- Subjects :
- Materials science
Photoluminescence
Ion beam
Annealing (metallurgy)
Analytical chemistry
02 engineering and technology
Substrate (electronics)
010402 general chemistry
021001 nanoscience & nanotechnology
Rutherford backscattering spectrometry
01 natural sciences
0104 chemical sciences
Nanoclusters
symbols.namesake
Mechanics of Materials
Transmission electron microscopy
symbols
General Materials Science
0210 nano-technology
Raman spectroscopy
Subjects
Details
- ISSN :
- 09737669 and 02504707
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- Bulletin of Materials Science
- Accession number :
- edsair.doi...........8b0da1d9a7329b6cfa416fc581278d24