The Effect of Gas‐Phase Additives C 2 H 4 , C 2 H 6, and C 2 H 2 on SiH4 / O 2 Chemical Vapor Deposition

The effects of adding and on the chemical vapor deposition of from were studied using a hot‐wall tubular reactor operated at a temperature of 873 K. Without additives, rough films with poor step coverage were obtained. Adding resulted in clear films with good step coverage. However, adding did not improve the quality of the film or the step coverage. Numerical simulations of the gas‐phase elementary reaction kinetics of the reaction system were made for the same conditions as the experiments. The simulations show rapid conversion (i.e., within 0.006s) of into , resulting in high concentrations of , which might form clusters that deposit to form rough films. Numerical simulations, including , and , showed that and reduced the gas‐phase reaction rate and that did not affect it. These numerical results agree with our experimental results and show that simulations of gas‐phase, elementary chemical reactions are sufficiently accurate to reproduce the behavior of some aspects of CVD processes.