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Effects of thickness on switching current for (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films under thermo‐electric coupled field
- Source :
- Micro & Nano Letters. 11:420-424
- Publication Year :
- 2016
- Publisher :
- Institution of Engineering and Technology (IET), 2016.
-
Abstract
- Homogeneous and compact antiferroelectric (AFE) (Pb, La)(Zr, Ti)O3 thick films in large area with different thicknesses were successfully fabricated by the sol–gel processing on Pt(111)/Ti/SiO2/Si(100) substrates. The characteristics of switching current of samples with different thicknesses under thermo-electric coupled field were investigated in detail. The experimental result shows that the peak of switching current density increased with the increase of temperature in three samples. Moreover, it is found that the thickness of the films has a big effect on the current density. Therefore, the peak of switching current density increased with increasing in the thickness at the same temperatures. The maximum switching current density of film with the thickness of 2254 nm is 4.35 × 10−5A/cm2. These results are quite important and necessary for design and preparation of the AFE materials applied on high sensitivity and intelligent micro-sensors and micro-actuators.
- Subjects :
- 010302 applied physics
Materials science
Field (physics)
Biomedical Engineering
Bioengineering
Lanthanum compounds
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Homogeneous
0103 physical sciences
Thermoelectric effect
Ferroelectric thin films
Antiferroelectricity
General Materials Science
Current (fluid)
Composite material
0210 nano-technology
Current density
Subjects
Details
- ISSN :
- 17500443
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- Micro & Nano Letters
- Accession number :
- edsair.doi...........8b989cf6d1b746648bc68058aed4a56b