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Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE

Authors :
C. Wouters
Robert Schewski
Zbigniew Galazka
Martin Albrecht
Wolfram Miller
R. Grüneberg
Klaus Irmscher
Andreas Popp
Ta-Shun Chou
Andreas Fiedler
Jutta Schwarzkopf
S. Bin Anooz
Source :
Journal of Physics D: Applied Physics. 54:034003
Publication Year :
2020
Publisher :
IOP Publishing, 2020.

Abstract

The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated forβ-Ga2O3thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-dopedβ-Ga2O3(100) substrates with 4° miscut. Transitions from step-bunching to step-flow to 2D island growth modes were achieved by varying the chamber pressure from 10 mbar to 40 mbar and/or by varying the O2/Ga ratio. High-qualityβ-Ga2O3homoepitaxial thin films with a high electron mobility of 153 cm2Vs−1have been obtained at a chamber pressure of 25 mbar and a growth rate of 3.6 nm min−1. The Si-doped films show electron concentrations in the range of 1 × 1017to 2 × 1019cm−3. When increasing the chamber pressure to 40 mbar step-flow growth mode and high charge carrier mobility can only be preserved by adjusting the O2/Ga ratio and increasing the Ar push gas flow. Secondary ion mass spectrometry and Hall measurements for Si and electron concentration, respectively, revealed Si compensation at higher tetraethyl orthosilicate flux.

Details

ISSN :
13616463 and 00223727
Volume :
54
Database :
OpenAIRE
Journal :
Journal of Physics D: Applied Physics
Accession number :
edsair.doi...........8bd7db77a094cf405ccf40f9c94792f6
Full Text :
https://doi.org/10.1088/1361-6463/abb6aa