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Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE
- Source :
- Journal of Physics D: Applied Physics. 54:034003
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated forβ-Ga2O3thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-dopedβ-Ga2O3(100) substrates with 4° miscut. Transitions from step-bunching to step-flow to 2D island growth modes were achieved by varying the chamber pressure from 10 mbar to 40 mbar and/or by varying the O2/Ga ratio. High-qualityβ-Ga2O3homoepitaxial thin films with a high electron mobility of 153 cm2Vs−1have been obtained at a chamber pressure of 25 mbar and a growth rate of 3.6 nm min−1. The Si-doped films show electron concentrations in the range of 1 × 1017to 2 × 1019cm−3. When increasing the chamber pressure to 40 mbar step-flow growth mode and high charge carrier mobility can only be preserved by adjusting the O2/Ga ratio and increasing the Ar push gas flow. Secondary ion mass spectrometry and Hall measurements for Si and electron concentration, respectively, revealed Si compensation at higher tetraethyl orthosilicate flux.
- Subjects :
- 010302 applied physics
Materials science
Acoustics and Ultrasonics
Doping
Analytical chemistry
02 engineering and technology
Island growth
021001 nanoscience & nanotechnology
Condensed Matter Physics
Epitaxy
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Chamber pressure
Tetraethyl orthosilicate
chemistry.chemical_compound
chemistry
0103 physical sciences
Metalorganic vapour phase epitaxy
Growth rate
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 54
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........8bd7db77a094cf405ccf40f9c94792f6
- Full Text :
- https://doi.org/10.1088/1361-6463/abb6aa