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Novel Co/Ni bi-layer salicidation for 45 nm gate technology
- Source :
- 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
- Publication Year :
- 2004
- Publisher :
- Japan Soc. Applied Phys, 2004.
-
Abstract
- We present the novel concept of "bi-layer metal salicidation" by using Co/Ni stacked films, which showed better film chemical and plasma resistance than pure NiSi. NFET device performance demonstrates 5% Idsat/Ioff (100 nA) improvement and no degradation in terms of sheet resistance, junction leakage and isolation than pure NiSi. We also prove the approach can be implemented easily to manufacturing with conventional post salicide process similar to CoSi/sub 2/ for 45 nm gate technology and below.
Details
- Database :
- OpenAIRE
- Journal :
- 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
- Accession number :
- edsair.doi...........8c81e715e8db0eac076336fd8bea10d8
- Full Text :
- https://doi.org/10.1109/vlsit.2003.1221133