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Radiation effects on SOI analog devices parameters
- Source :
- IEEE Transactions on Nuclear Science. 41:565-571
- Publication Year :
- 1994
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1994.
-
Abstract
- Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 10 Mrad(SiO/sub 2/) and 3.8 10/sup 14/ neutrons/cm/sup 2/ are reported. Analysis pertains to hardness limiting mechanism identification. >
- Subjects :
- Nuclear and High Energy Physics
Materials science
business.industry
Silicon on insulator
Hardware_PERFORMANCEANDRELIABILITY
Integrated circuit
Radiation
Radiation effect
law.invention
Nuclear Energy and Engineering
CMOS
law
Operational amplifier
Optoelectronics
Irradiation
Electrical and Electronic Engineering
business
Radiation hardening
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........8c8d6ed1e4f484fbad7c397ff3fe8b66
- Full Text :
- https://doi.org/10.1109/23.299800