Back to Search Start Over

Modeling Kirk effect of RESURF LDMOS

Authors :
Zhilin Sun
Weifeng Sun
Longxing Shi
Source :
Solid-State Electronics. 49:1896-1899
Publication Year :
2005
Publisher :
Elsevier BV, 2005.

Abstract

Two-dimensional surface electric field in the drift region of RESURF LDMOS is modeled in the off-state and on-state. Numerical results are shown to support the analytical results. Based on these results, 3-D Kirk effect is modeled. The reason inducing high electric field near the drain is demonstrated and methods to lower the high electric field are proposed.

Subjects

Subjects :
LDMOS
Materials science
Kirk effect
business.industry
Electrical engineering
Near and far field
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Surface field
Electric field
Lateral diffusion
Materials Chemistry
Optoelectronics
High field
Electrical and Electronic Engineering
business

Details

ISSN :
00381101
Volume :
49
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........8cc6c942ff13a4ce272a28e22c823d3a

Tools

Authors Abstract Subjects Details