Back to Search Start Over

Patterned atomic layer epitaxy of Si/Si(001):H

Authors :
Joshua B. Ballard
James H. G. Owen
Justin Alexander
John N. Randall
James R. Von Ehr
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:06F201
Publication Year :
2011
Publisher :
American Vacuum Society, 2011.

Abstract

We aim to develop techniques for the building of atomically precise structures. On the H-terminated Si(001) surface, H atoms can be selectively removed using an STM tip with appropriate lithography conditions, creating arbitrary patterns of reactive dangling bonds with atomic precision. The exposed patterns are used as templates for the growth of Si and Ge by gas-source epitaxy, using disilane and digermane as the precursor gases. The quality of the epitaxy, in terms of island size and defect density of the second and subsequent monolayer (ML), is dependent upon the electron exposure. Good-quality growth of the second and following MLs requires a multiple of the exposure required for good-quality growth of the first ML. This is interpreted in terms of remanent hydrogen in island sites in the first ML.

Details

ISSN :
21662754 and 21662746
Volume :
29
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........8ce9ed4967d5a0e3ab8666f89d1f5e51
Full Text :
https://doi.org/10.1116/1.3628673