Cite
Improvement of thermal stability and electrical property of Cu/Cu(Zr)/SiOC:H film stack by controlling the structure and composition of Zr(Ge) nano-interlayer
MLA
Yixiao Zhang, et al. “Improvement of Thermal Stability and Electrical Property of Cu/Cu(Zr)/SiOC:H Film Stack by Controlling the Structure and Composition of Zr(Ge) Nano-Interlayer.” Microelectronic Engineering, vol. 118, Apr. 2014, pp. 41–46. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8d2c3cabd5fe18d8efff3a57a7eaf08c&authtype=sso&custid=ns315887.
APA
Yixiao Zhang, Ke-Wei Xu, & Bo Liu. (2014). Improvement of thermal stability and electrical property of Cu/Cu(Zr)/SiOC:H film stack by controlling the structure and composition of Zr(Ge) nano-interlayer. Microelectronic Engineering, 118, 41–46.
Chicago
Yixiao Zhang, Ke-Wei Xu, and Bo Liu. 2014. “Improvement of Thermal Stability and Electrical Property of Cu/Cu(Zr)/SiOC:H Film Stack by Controlling the Structure and Composition of Zr(Ge) Nano-Interlayer.” Microelectronic Engineering 118 (April): 41–46. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8d2c3cabd5fe18d8efff3a57a7eaf08c&authtype=sso&custid=ns315887.