Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology

MLA

Toshifumi Irisawa, et al. “Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI PMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology.” IEEE Transactions on Electron Devices, vol. 66, Mar. 2019, pp. 1182–88. EBSCOhost, https://doi.org/10.1109/ted.2019.2895349.

APA

Toshifumi Irisawa, Wen Hsin Chang, Hiroyuki Ishii, Tatsuro Maeda, & Noriyuki Uchida. (2019). Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology. IEEE Transactions on Electron Devices, 66, 1182–1188. https://doi.org/10.1109/ted.2019.2895349

Chicago

Toshifumi Irisawa, Wen Hsin Chang, Hiroyuki Ishii, Tatsuro Maeda, and Noriyuki Uchida. 2019. “Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI PMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology.” IEEE Transactions on Electron Devices 66 (March): 1182–88. doi:10.1109/ted.2019.2895349.