Photolytic Etching of Polycrystalline Silicon in SF6 Atmosphere

MLA

Norio Nakazato, et al. “Photolytic Etching of Polycrystalline Silicon in SF6 Atmosphere.” Japanese Journal of Applied Physics, vol. 25, Nov. 1986, p. L881. EBSCOhost, https://doi.org/10.1143/jjap.25.l881.

APA

Norio Nakazato, Shinjirou Ueda, Mikio Takai, & Seiichi Watanabe. (1986). Photolytic Etching of Polycrystalline Silicon in SF6 Atmosphere. Japanese Journal of Applied Physics, 25, L881. https://doi.org/10.1143/jjap.25.l881

Chicago

Norio Nakazato, Shinjirou Ueda, Mikio Takai, and Seiichi Watanabe. 1986. “Photolytic Etching of Polycrystalline Silicon in SF6 Atmosphere.” Japanese Journal of Applied Physics 25 (November): L881. doi:10.1143/jjap.25.l881.