A model current spectral density for hot‐carrier noise in semiconductors

Analytical expressions are presented for the spectral density of current fluctuations derived from a rigorous theoretical analysis which can be applied at any electric‐field strength. The main peculiarities of these spectra are discussed from an analytical point of view and in terms of the physical processes involved at increasing electric fields. Then, two different expressions are provided for an analytical fitting of spectra based on physical parameters related to a rigorous eigenvalue expansion of the correlation functions. These model spectra are in good agreement with the experiments and the results of Monte Carlo simulations for the case of p‐type Si at 77 K.