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Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching
- Source :
- 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- This paper reports a normally-off high voltage hybrid Al 2 O 3 /GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al 2 O 3 /GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer curve. The three terminal off-state breakdown voltage is 1650 V for the device with 30 μm gate-drain distance with floating Si substrate. The breakdown voltage is limited to 1000 V when the Si substrate is grounded. The on-resistance is 7.0 mΩ·cm 2 for the device with 30 μm gate-drain distance and the power figure of merit is 388 MW/cm 2 . The small signal RF performance of the normally-off GaN MOSFET is also evaluated.
Details
- Database :
- OpenAIRE
- Journal :
- 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
- Accession number :
- edsair.doi...........8e10a6c040b7174120e25cfaff884606