0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX

Superior RF CMOS of 115 f/sub T/ and 80GHz f/sub MAX/ has been realized by 0.13/spl mu/m low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NF/sub min/ of 2.2 dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P/sub 1dB/ of near 10dBm can fit Bluetooth requirement and 55% PAE at 2.4GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.