Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress

MLA

Dongyu Qi, et al. “Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress.” IEEE Transactions on Electron Devices, vol. 68, Feb. 2021, pp. 550–55. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8eba59bfeff752278bd56e74d4a24991&authtype=sso&custid=ns315887.

APA

Dongyu Qi, Nairi Liang, Yining Yu, Dongli Zhang, Huaisheng Wang, & Mingxiang Wang. (2021). Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress. IEEE Transactions on Electron Devices, 68, 550–555.

Chicago

Dongyu Qi, Nairi Liang, Yining Yu, Dongli Zhang, Huaisheng Wang, and Mingxiang Wang. 2021. “Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress.” IEEE Transactions on Electron Devices 68 (February): 550–55. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8eba59bfeff752278bd56e74d4a24991&authtype=sso&custid=ns315887.