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Wafer-scale integration of antimonide-based MWIR FPAs

Authors :
Allen Hollingsworth
Binh-Minh Nguyen
Terry De Lyon
William Z. Korth
Choukri Allali
Alex Gurga
Diego E. Carrasco
Shuoqin Wang
Mary Chen
Sevag Terterian
John Caulfield
Jon Paul Curzan
Yan Tang
J. Jenkins
Nishant Dhawan
Source :
Infrared Technology and Applications XLVII.
Publication Year :
2021
Publisher :
SPIE, 2021.

Abstract

High performance infrared focal plane arrays (FPAs) play a critical role in a wide range of imaging applications. However the high cost associated with the required cooling and serially processed die-level hybridization is major barrier that has thwarted Mid-wavelength Infrared (MWIR) detector technology from penetrating largevolume, low-cost markets. Under the Defense Advanced Research Projects Agency (DARPA) WIRED program, the HRL team has developed a wafer level integration schemes to fabricate large format Antimonidebased MWIR FPAs on Si Read Out Integrated Circuit (ROIC) as a means to achieve significant fab cost reduction and enhanced production scalability. The DARPA-hard challenge we are addressing is the thermal and stress management in the integration of two dissimilar materials to avoid detector and ROIC degradation and to maintain structure integrity at the wafer scale. In addition, a digital ROIC with extremely large well capacity was designed and taped-out, in order to increase the operating temperature of the FPAs. In this talk, we discuss our progress under the DARPA WIRED program.

Details

Database :
OpenAIRE
Journal :
Infrared Technology and Applications XLVII
Accession number :
edsair.doi...........8f0da21e5cd59d578e9e5e7607479a4a
Full Text :
https://doi.org/10.1117/12.2588311