Growth of GaSb1−xBix by molecular beam epitaxy

Authors :: Anders Hallén
Peixiong Shi
Ivy Saha Roy
Yuxin Song
Shumin Wang
Source :: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:02B114
Publication Year :: 2012
Publisher :: American Vacuum Society, 2012.
Abstract: Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

Subjects :: Materials science
Molecular beam epitaxial growth
Process Chemistry and Technology
X-ray crystallography
Materials Chemistry
Analytical chemistry
Electrical and Electronic Engineering
Instrumentation
Layer (electronics)
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Molecular beam epitaxy

ISSN :: 21662754 and 21662746
Volume :: 30
Database :: OpenAIRE
Journal :: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :: edsair.doi...........8f83a5f01eb3a9729829c17fde485ff2
Full Text :: https://doi.org/10.1116/1.3672025