Sensor with Subsequent Measurement of X, Y and Z Magnetic-field Components

An original multidimensional magnetic-field sensor using subsequent measurement method based on a bipolar drift-aided magnetotransistor is presented. The device contains silicon substrate, emitter, two base contacts and four collectors. Using a new effect consisting of electrical control of magnetosensitivity polarity, the full information about all components is obtained by three collector pair arrangements. The measurement is carrying out with the same magnetotransistor, but at different time. The channel sensitivities reach $\boldsymbol{\mathbf{S}_{\mathbf{x}} \approx 37.5 \mu \mathrm{A} / \mathrm{T}, \mathbf{S}_{\mathrm{y}} \approx 75 \mu \mathbf{A} / \mathbf{T}}$ and $\boldsymbol{\mathrm{S}_{\mathrm{z}}\approx 98\mu \mathrm{A}/\mathrm{T}}$ , respectively.