JBS power-rectifiers for 1.7kV applications with conduction properties close to pure Schottky-design

This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state performance as well as moderation of surge current events are investigated. Finally, we report experimental results on successfully manufactured 1.7 kV JBS power-rectifiers demonstrating the practical validity of our numerical approach.