Back to Search Start Over

SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)

Authors :
Camilla Coletti
Wolfgang J. Choyke
Stephen E. Saddow
Robert P. Devaty
Woo Y. Lee
Ulrich Starke
Source :
Materials Science Forum. :677-680
Publication Year :
2006
Publisher :
Trans Tech Publications, Ltd., 2006.

Abstract

The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e. the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using AFM, LEED and AES. After hydrogen etching the surfaces show steps parallel and perpendicular to the caxis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectra this indicates the development of an ordered oxide. Both surfaces show an oxygen free, well ordered surface after Si deposition and annealing.

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........91026ec0e8c5c6e21df0ab22f740ff1d
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.527-529.677