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SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
- Source :
- Materials Science Forum. :677-680
- Publication Year :
- 2006
- Publisher :
- Trans Tech Publications, Ltd., 2006.
-
Abstract
- The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e. the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using AFM, LEED and AES. After hydrogen etching the surfaces show steps parallel and perpendicular to the caxis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectra this indicates the development of an ordered oxide. Both surfaces show an oxygen free, well ordered surface after Si deposition and annealing.
- Subjects :
- Materials science
Atomic force microscopy
Annealing (metallurgy)
Mechanical Engineering
Oxide
chemistry.chemical_element
Condensed Matter Physics
Oxygen
Spectral line
Crystallography
chemistry.chemical_compound
chemistry
Chemical engineering
Mechanics of Materials
Perpendicular
General Materials Science
Hydrogen etching
Porosity
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........91026ec0e8c5c6e21df0ab22f740ff1d
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.527-529.677