High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

This letter reports a new and high-performance InGaP/In/sub x/Ga/sub 1-x/As high electron mobility transistor (HEMT) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/In/sub x/Ga/sub 1-x/As structure, good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1/spl times/100 /spl mu/m/sup 2/) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V/sub GS/=2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.