Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Czochralski Growth of Si Crystals Heavily Doped with in Impurity and Co-Doped with Electrically Neutral Impurity C or Ge Was Conducted in Order to Investigate the Solubility and Ionization Ratio of in in Si for Utilizing in Advanced ULSI and PV Devices. The Carrier Concentrations in the Grown in-Doped and (In+C) and (In+Ge) Co-Doped Crystals Were in a Range of 3.5~6.5 × 1016 Cm-3, much Lower than the Total Concentration of in Impurity due to the Low Ionization Ratio. Sufficient Increase of Carrier Concentrations by Co-Doping of C or Ge Impurity Was Not Detected for their Low Concentrations in the Grown Crystals Investigated.