Carrier Localization in Basal-Plane Stacking Faults in Si-Doped Nonpolar a-Plane (1120) GaN Epilayers Containing Different Defect Densities

Authors :: Soohwan Jang
Ki-Nam Park
Sung-Min Hwang
Jung-Hoon Song
Kwang Hyeon Baik
Jung Ho Park
Yong Gon Seo
Ji-Hoon Kim
Source :: Journal of Nanoscience and Nanotechnology. 16:11591-11598
Publication Year :: 2016
Publisher :: American Scientific Publishers, 2016.

Subjects :: Materials science
Condensed matter physics
Plane (geometry)
Biomedical Engineering
Stacking
Si doped
General Materials Science
Bioengineering
Basal plane
General Chemistry
Condensed Matter Physics

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