Back to Search
Start Over
Conductance quantization in etchedSi∕SiGequantum point contacts
- Source :
- Physical Review B. 74
- Publication Year :
- 2006
- Publisher :
- American Physical Society (APS), 2006.
-
Abstract
- We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.
- Subjects :
- Physics
Quantization (physics)
Condensed matter physics
Ballistic conduction
Quantum wire
Quantum point contact
Conductance
Heterojunction
Conductance quantum
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Quantum
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 1550235X and 10980121
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........91cc7b1e0fb093b076e69cd2f34cb92f