A new near-infrared-light-emitting diode of monodispersed nanocrystallite silicon

Authors :: N. Suzuki
T. Yoshida
Toshiharu Makino
Y. Yamada
Source :: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: The purpose of this work is to develop a near-infrared-light-emitting diode with active materials of monodispersed Si nanocrystallites that are highly compatible with ULSI technology. The monodispersed Si nanocrystallites were synthesized by laser ablation and subsequent size-classification process. The near-infrared emission was sharp and showed a peak above the band-gap region (position: 1.17 eV, width: 0.15 eV); therefore, it presumably originates from spatial quantum confinement effects of the carriers.

Subjects :: Laser ablation
Materials science
Near infrared light
Silicon
Hybrid silicon laser
business.industry
chemistry.chemical_element
law.invention
Pulsed laser deposition
chemistry
law
Quantum dot
Optoelectronics
business
Light-emitting diode
Diode

Database :: OpenAIRE
Journal :: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
Accession number :: edsair.doi...........91ef0ce03a42ee95c6fc21205e166fdc

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