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Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers

Authors :
N. V. Kryzhanovskaya
A. V. Savelyev
A. E. Zhukov
Yu. M. Shernyakov
A. A. Krasivichev
Mikhail V. Maximov
F. I. Zubov
E. M. Arakcheeva
Source :
Semiconductors. 46:225-230
Publication Year :
2012
Publisher :
Pleiades Publishing Ltd, 2012.

Abstract

An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition due to gain/absorption variations upon the first excited-state transition in quantum dots. It is shown that a decrease in optical loss, an increase in saturated gain, and an increase in the energy separation between the excited-state and ground-state transitions results in a decrease in the α factor both at and above the lasing threshold.

Details

ISSN :
10906479 and 10637826
Volume :
46
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........92b331f3bc88023ce5ce7c05c1505a7d