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Thermal distribution in amorphous InSnZnO thinā€film transistor

Authors :
Koki Yano
Masashi Kasami
Haruka Yamazaki
Yukiharu Uraoka
Shigekazu Tomai
Satoshi Urakawa
Masahiro Horita
Mamoru Furuta
Yasuaki Ishikawa
Dapeng Wang
Yoshihiro Ueoka
Source :
physica status solidi c. 10:1561-1564
Publication Year :
2013
Publisher :
Wiley, 2013.

Abstract

We have investigated thermal distribution of an amorphous InSnZnO thin-film transistor (TFT) under voltage stress by using thermal imaging system. To clarify an influence of only self-heating phenomenon on reliability, we have focused on a channel scale dependence of heating. As the result, heating effect were strongly depended on channel scale and showed two types of dependences on channel length and width. When positive bias stress was applied to TFT, severe threshold voltage shift and high heating temperature were observed for wider TFT. Moreover, reliability under voltage stress was seems to be affected by accumulation of heating in wider TFT. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Details

ISSN :
16101642 and 18626351
Volume :
10
Database :
OpenAIRE
Journal :
physica status solidi c
Accession number :
edsair.doi...........92fc9a5645638fb12ecaa98e41b6bd91
Full Text :
https://doi.org/10.1002/pssc.201300253