Diethylenetriamine assisted synthesis and characterization of stannite quaternary semiconductor Cu2ZnSnSe4 nanorods by self-assembly

Stannites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I 2 –II–IV–VI 4 nanocrystals of Cu 2 ZnSnSe 4 are stannite material with a near-optimum band gap of ∼1.5 eV. Semiconductor Cu 2 ZnSnSe 4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu 2 ZnSnSe 4 solar cell under AM1.5G are as follows: open circuit voltage of 308 mV, short-circuit current of 29.9 mA/cm 2 , fill factor of 27%, and a power conversion efficiency of 2.48%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu 2 ZnSnSe 4 nanorods is proposed.