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Middle of Line (MOL) Process Investigation in Ring Oscillator failure

Authors :
Samuel S. Choi
Jay W. Strane
Victor Chan
Sean Teehan
James Chingwei Li
C. Le
James J. Demarest
Marc A. Bergendahl
A. Gaul
Dechao Guo
Andrew M. Greene
Source :
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Publication Year :
2020
Publisher :
IEEE, 2020.

Abstract

Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.

Details

Database :
OpenAIRE
Journal :
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
Accession number :
edsair.doi...........93e8a90f167b681b32d0a241ede4550e
Full Text :
https://doi.org/10.1109/asmc49169.2020.9185254