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Laser forming of silicon films using nanoparticle precursor
- Source :
- Journal of Electronic Materials. 35:993-1004
- Publication Year :
- 2006
- Publisher :
- Springer Science and Business Media LLC, 2006.
-
Abstract
- Polycrystalline silicon films containing cubic silicon crystallites of size 3–4 µm have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energydispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current-voltage (I–V) characteristics were measured.
- Subjects :
- Materials science
Dopant
Silicon
Doping
Nanocrystalline silicon
Analytical chemistry
chemistry.chemical_element
Sintering
engineering.material
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
symbols.namesake
Polycrystalline silicon
chemistry
Chemical engineering
Materials Chemistry
engineering
symbols
Crystallite
Electrical and Electronic Engineering
Raman spectroscopy
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........93f0654e0046736d7f2d8ba836d02e8f
- Full Text :
- https://doi.org/10.1007/bf02692559