Crystallographic Texture Study of Nano-SiC-Doped MgB$_2$ Wires

In this work, we present the characterization of Ti sheathed MgB $_2$ wires prepared by PIT with two different cross-sections: circular and hexagonal. We determined the crystallographic texture of both the Ti sheath and the MgB $_2$ core by X-ray diffraction (XRD) pole figures. We evaluated the critical current density ( $J_c$ ) of the wires in two different directions using a SQUID magnetometer, in order to determine the anisotropic factor of the current density ( $J_{af}$ ). We found that $J_{af}$ is larger than one and it is field independent for both wires, consistently with the increased probability to encounter the basal planes perpendicular to the axial direction ( $AD$ ) obtained in the crystallographic texture.