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Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

Authors :
Tapas Ganguli
S. D. Singh
Sahadeb Ghosh
Madhusmita Baral
Rajiv Kamparath
Source :
Applied Physics Letters. 115:251603
Publication Year :
2019
Publisher :
AIP Publishing, 2019.

Abstract

Epitaxial growth of (111) oriented NiO layers on (−201) oriented β-Ga2O3 and vice versa have been carried out to obtain an all oxide p-n heterojunction (HJ) consisting of NiO/β-Ga2O3 and β-Ga2O3/NiO interfaces, respectively. Careful investigations by minimizing the effect of differential charging phenomena during x-ray photoelectron spectroscopy measurements yield a valence band offset (VBO) value of 1.6 ± 0.2 eV for both NiO/β-Ga2O3 and β-Ga2O3/NiO HJs. Thus, the VBO value is practically independent of the growth sequence for p-type NiO/n-type β-Ga2O3 HJs and follows band commutativity. The band diagram shows a staggered (type-II) band alignment and the value of the conduction band offset is found to be small (0.3 ± 0.2 eV). Our results are useful to design optoelectronic devices based on all oxide p-type NiO/n-type β-Ga2O3 HJs.

Details

ISSN :
10773118 and 00036951
Volume :
115
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........94cb2b9bec98fba924eb09401abadb39
Full Text :
https://doi.org/10.1063/1.5126150