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Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy
- Source :
- Applied Physics Letters. 115:251603
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- Epitaxial growth of (111) oriented NiO layers on (−201) oriented β-Ga2O3 and vice versa have been carried out to obtain an all oxide p-n heterojunction (HJ) consisting of NiO/β-Ga2O3 and β-Ga2O3/NiO interfaces, respectively. Careful investigations by minimizing the effect of differential charging phenomena during x-ray photoelectron spectroscopy measurements yield a valence band offset (VBO) value of 1.6 ± 0.2 eV for both NiO/β-Ga2O3 and β-Ga2O3/NiO HJs. Thus, the VBO value is practically independent of the growth sequence for p-type NiO/n-type β-Ga2O3 HJs and follows band commutativity. The band diagram shows a staggered (type-II) band alignment and the value of the conduction band offset is found to be small (0.3 ± 0.2 eV). Our results are useful to design optoelectronic devices based on all oxide p-type NiO/n-type β-Ga2O3 HJs.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Non-blocking I/O
Analytical chemistry
Oxide
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
chemistry.chemical_compound
X-ray photoelectron spectroscopy
chemistry
0103 physical sciences
Band diagram
Valence band
0210 nano-technology
Conduction band
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........94cb2b9bec98fba924eb09401abadb39
- Full Text :
- https://doi.org/10.1063/1.5126150