A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies

In this paper, an innovative series-parallel hybrid circuit topology with silicon carbide MOSFETs is presented and analyzed. This topology consists of two uniform parts in parallel and each of the parts includes three sub-parts in series. The sub-part contains three primary parts connected in string where each of these primary parts has a parallel of two SiC MOSFETs. These 36 SiC devices are divided into six sub-parts, which are driven by a common driving signal. A 10kV/200A SiC MOSFETs module is fabricated based on this hybrid topology with thirty-six 1200V/50A SiC MOSFET dies. The dynamic switching behavior of the module is analyzed and double-pulse tests have been performed at 5400V/200A. The results show a good switching speed of 100ns in turn-on process and 200ns in turn-off process.