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Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked–layered MoSe2/Si heterojunction
- Source :
- Nanotechnology. 32:075201
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked–layered MoSe2 film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe2/Si 2D–3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 1014 Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe2/Si heterojunction can be attributed to be the high-quality stacked–layered MoSe2 film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe2/Si 2D–3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices.
- Subjects :
- Materials science
Photodetector
Bioengineering
02 engineering and technology
010402 general chemistry
01 natural sciences
Pulsed laser deposition
law.invention
Quality (physics)
Transition metal
law
General Materials Science
Electrical and Electronic Engineering
business.industry
Mechanical Engineering
Near-infrared spectroscopy
Heterojunction
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
Photodiode
Mechanics of Materials
Optoelectronics
Density functional theory
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi...........953093ad73224ab5484b06987761b482