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High-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical Oxidation

Authors :
Pho Van Bui
Daisetsu Toh
Ai Isohashi
Yasuhisa Sano
Satoshi Matsuyama
Ryosuke Ohnishi
Kazuto Yamauchi
Hideka Kida
Source :
Materials Science Forum. 963:525-529
Publication Year :
2019
Publisher :
Trans Tech Publications, Ltd., 2019.

Abstract

Catalyst-referred etching (CARE) is an abrasive-free and damage-free polishing method that involves applying a catalytic reaction at the contact point of the catalyst surface and workpiece in a chemical solution. An atomically flat silicon carbide (SiC) wafer surface can be obtained by the CARE process. Recently, it was found that water can be used as a chemical solution, even in the case of SiC polishing. However, its current removal rate of 4H-SiC (0001) 4°off-axis substrate is only 2 nm/h and is expected to increase. In this study, the use of photoelectrochemical oxidation in combination with the CARE process using water was investigated, successfully increasing the removal rate up to approximately 100 nm/h.

Details

ISSN :
16629752
Volume :
963
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........9537b05737596089d91d349a9791d253
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.963.525