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Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing

Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing

Authors :
Weihua Wu
Zhaosong Liu
Yuan-Jun Hsu
Yi Zhuo
Shengdong Zhang
Source :
Journal of Physics: Conference Series. 1920:012020
Publication Year :
2021
Publisher :
IOP Publishing, 2021.

Abstract

Top-gate self-aligned IGTO TFTs were used as an example to study the contradiction of uniformity and PBTS stability when developing TFT with high mobility. High intrinsic carrier concentration restricted the tuning of SiO2 deposition. To ensure the uniformity, relatively higher power was employed for GI deposition to reduce donor-type oxygen vacancies. Deep electron traps formed by excess oxygen lead to poor PBTS stability. The PBTS stability was improved without deterioration of uniformity by introducing low temperature (200 °C) annealing, to control hydrogen diffusion from ILD layer which would passivate the electron traps.

Details

ISSN :
17426596 and 17426588
Volume :
1920
Database :
OpenAIRE
Journal :
Journal of Physics: Conference Series
Accession number :
edsair.doi...........95af1703d37ab0ff4c46ddb95c79e78c
Full Text :
https://doi.org/10.1088/1742-6596/1920/1/012020