Back to Search
Start Over
Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing
Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing
- Source :
- Journal of Physics: Conference Series. 1920:012020
- Publication Year :
- 2021
- Publisher :
- IOP Publishing, 2021.
-
Abstract
- Top-gate self-aligned IGTO TFTs were used as an example to study the contradiction of uniformity and PBTS stability when developing TFT with high mobility. High intrinsic carrier concentration restricted the tuning of SiO2 deposition. To ensure the uniformity, relatively higher power was employed for GI deposition to reduce donor-type oxygen vacancies. Deep electron traps formed by excess oxygen lead to poor PBTS stability. The PBTS stability was improved without deterioration of uniformity by introducing low temperature (200 °C) annealing, to control hydrogen diffusion from ILD layer which would passivate the electron traps.
Details
- ISSN :
- 17426596 and 17426588
- Volume :
- 1920
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series
- Accession number :
- edsair.doi...........95af1703d37ab0ff4c46ddb95c79e78c
- Full Text :
- https://doi.org/10.1088/1742-6596/1920/1/012020