Fabrication of nanostructured porous silicon for power switch peripheries

The tunable semi-insulating nature of nanostructured porous silicon gives rise to a potential application in semiconductor industry — power switch periphery. In this work, fabrication of nanostructured porous silicon by anodic etching is investigated. The relationship between anodization conditions and resulting morphology is defined. Our work demonstrates that, by careful tuning structure, thickness and porosity, well-engineered nanostructured porous silicon enables controlling electronic insulation properties, which certainly broaden the design option of power device periphery.