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Effect of high temperature annealing on strain and band gap of GaN nanoparticles
- Source :
- Chinese Physics B. 19:086106
- Publication Year :
- 2010
- Publisher :
- IOP Publishing, 2010.
-
Abstract
- Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200 °C for 30 min. XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200 °C, and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions. If the as-synthesised GaN nanoparticles at 950 °C are regarded as standard, the thermal expansion changes nonlinearly with temperature and is anisotropic; the expansion below 1000 °C is smaller than that above 1000 °C. This study provides an experimental demonstration for selecting the proper annealing temperature of GaN. In addition, a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200 °C is observed, which can be ascribed to the dominant transitions from the C(Γ7) with the peak energy at 3.532 eV.
Details
- ISSN :
- 16741056
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........963679e1f2df35682350bceea0b9eb2c