Back to Search
Start Over
Mitigation of extreme ultraviolet mask defects by pattern shifting: Method and statistics
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:051605
- Publication Year :
- 2012
- Publisher :
- American Vacuum Society, 2012.
-
Abstract
- Currently the mask blanks used in extreme ultraviolet lithography cannot be fabricated free of defects. A rapid method of determining the optimum placement of mask patterns on the blank to avoid these defects is described. Using this method, the probability of fabricating defect-free masks, when the pattern is (1) randomly placed on the mask blank or (2) positioned optimally to avoid defects, is determined for a variety of integrated circuit designs, defect densities, and defect sizes. In addition to circular defects, oval and clusters of defects are also considered. Finally, simple analytical expressions for the probability of obtaining a defect-free mask in the case of random placement of the mask pattern is presented and compared to Monte Carlo simulations.
- Subjects :
- Materials science
Analytical expressions
business.industry
Process Chemistry and Technology
Extreme ultraviolet lithography
Monte Carlo method
Integrated circuit
Integrated circuit design
Blank
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Optics
law
Extreme ultraviolet
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Instrumentation
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........9647989a27afe7b82ec130e1928a3b04