Scandium And Gallium Implantation Doping Of Silicon Carbide

Rutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.