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Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
- Source :
- Applied Physics Letters. 67:846-847
- Publication Year :
- 1995
- Publisher :
- AIP Publishing, 1995.
-
Abstract
- The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Condensed Matter::Other
Relaxation (NMR)
Heterojunction
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Microstructure
Layer thickness
Condensed Matter::Materials Science
Crystallography
Transmission electron microscopy
Dislocation
Layer (electronics)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 67
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........972d648c37358b9ef1c7f14744d80282