Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by

The results of investigating the behavior of the boron impurity in synthetic diamond and the effect of uniaxial static pressure on the aluminum acceptor in silicon are presented. The data on the hyperfine interaction and on the relaxation of the magnetic moment of Al acceptor in silicon were obtained. It was found that the uniaxial stress changed both the absolute value and the temperature dependence of the relaxation rate of the acceptor. Unlike the case in silicon, in CVD diamond the paramagnetic shift in the muon spin precession frequency was not observed within the accuracy of the measurements, and a missing fraction of muon polarization was found at T