Physical Mechanism for Different Phases and Turn-Around of Idsat in PMOS under HCI Stress

Authors :: Yi-Heng Chen
Wei-Cheng Chu
Yu-Chih Chang
Chien-Fu Chen
Bo-An Tsai
Source :: 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publication Year :: 2021
Publisher :: IEEE, 2021.

Subjects :: Turn (biochemistry)
Stress (mechanics)
Materials science
Engineering physics
Mechanism (sociology)
PMOS logic

Database :: OpenAIRE
Journal :: 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Accession number :: edsair.doi...........97e9a79abd4d36b154b6d6d6f8c0e0c0

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