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Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance
- Source :
- Chinese Physics Letters. 23:446-449
- Publication Year :
- 2006
- Publisher :
- IOP Publishing, 2006.
-
Abstract
- We prepare 2×(NiFe/CoZnO)/ZnO/(CoZnO/Co)×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2×(NiFe/CoZnO) and the fixed magnetic layer (CoZnO/Co)×2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90 K and 7.0% at room temperature, respectively.
- Subjects :
- Materials science
Condensed matter physics
Spin polarization
Magnetoresistance
Condensed Matter::Other
business.industry
Spin valve
General Physics and Astronomy
Magnetic semiconductor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Magnetic field
Condensed Matter::Materials Science
Semiconductor
Sputtering
business
Layer (electronics)
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........9871f866175fb353af98b643785e1402