Back to Search
Start Over
The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality
- Source :
- Journal of Applied Physics. 64:3476-3480
- Publication Year :
- 1988
- Publisher :
- AIP Publishing, 1988.
-
Abstract
- The quality of GaInAs‐AlInAs epitaxial layers is found to be critically dependent on the degree of (100)‐InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half‐maximum of quantum‐well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum‐well structures.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........995fea384fe3cda6b05f8961bad11241