The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality

The quality of GaInAs‐AlInAs epitaxial layers is found to be critically dependent on the degree of (100)‐InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half‐maximum of quantum‐well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum‐well structures.